HeteroStax

HeteroStax Inc. (株式会社ヘテロスタックス) is a Japanese deep-tech startup spun out of Osaka Prefecture University that is developing a new generation of power semiconductor devices using heterogeneous junction architecture. Its proprietary SABFET™ technology integrates a silicon channel layer with a silicon carbide (SiC) drift layer in a single chip, combining the low channel resistance of Si with the high voltage tolerance and low loss of SiC — reducing power conversion losses by up to 60% compared to conventional approaches. Target applications include data-center power supplies, electric vehicle inverters, renewable energy converters, and industrial robotics. The company was founded in October 2025 and is backed by Realtech Fund.