FLOSFIA

FLOSFIA Inc. is a deep-tech semiconductor startup spun out of Kyoto University, founded in March 2011 and headquartered in Nishikyo-ku, Kyoto, Japan. The company is a world leader in the development and commercialization of gallium oxide (α-Ga₂O₃) power devices — a next-generation semiconductor material estimated to achieve power loss 7,000 times lower than silicon and 20 times lower than silicon carbide, at one-fifth to one-tenth the manufacturing cost of competing wide-bandgap materials. FLOSFIA's proprietary MIST DRY™ thin-film deposition technology enables high-quality corundum-structured gallium oxide films to be deposited through a non-vacuum mist chemical vapor deposition (CVD) process, dramatically reducing production costs. The company has produced the world's first α-Ga₂O₃ Schottky Barrier Diode with the lowest specific on-resistance of any commercially available SBD and the first normally-off α-Ga₂O₃ MOSFET. Strategic investors include DENSO (Toyota group), Yaskawa Electric, and Daikin Industries. FLOSFIA has raised approximately ¥4.2 billion (~$30M) across multiple rounds, employs approximately 60 people, and holds over 700 patent applications with 200+ granted. In 2026 the company was selected as a finalist for the WIPO Global Awards.